Method and apparatus providing pixel array having automatic light control pixels and image capture pixels

ABSTRACT

A pixel array uses two sets of pixels to provide accurate exposure control. One set of pixels provide continuous output signals for automatic light control (ALC) as the other set integrates and captures an image. ALC pixels allow monitoring of multiple pixels of an array to obtain sample data indicating the amount of light reaching the array, while allowing the other pixels to provide proper image data. A small percentage of the pixels in an array is replaced with ALC pixels and the array has two reset lines for each row; one line controls the reset for the image capture pixels while the other line controls the reset for the ALC pixels. In the columns, at least one extra control signal is used for the sampling of the reset level for the ALC pixels, which happens later than the sampling of the reset level for the image capture pixels.

FIELD OF THE INVENTION

The invention relates generally to imaging devices and more particularlyto a pixel array providing automatic light control for accurate exposurecontrol in an imaging device.

BACKGROUND OF THE INVENTION

A CMOS imager circuit includes a focal plane array of pixel cells, eachone of the cells including a photosensor, for example, a photogate,photoconductor or a photodiode overlying a substrate for accumulatingphoto-generated charge in the underlying portion of the substrate. Eachpixel cell has a readout circuit that includes at least an output fieldeffect transistor formed in the substrate and a charge storage regionformed on the substrate connected to the gate of an output transistor.The charge storage region may be constructed as a floating diffusionregion.

In a CMOS imager, the active elements of a pixel cell perform thenecessary functions of: (1) photon to charge conversion; (2)accumulation of image charge; (3) transfer of accumulated charge to astorage region, typically operated as a floating diffusion region; (4)resetting the storage region to a known state; (5) selection of a pixelfor readout; and (6) output and amplification of a signal representingpixel charge. The charge at the storage region is typically converted toa pixel output voltage by the capacitance of the storage region and asource follower output transistor.

CMOS imagers of the type discussed above are generally known asdiscussed, for example, in U.S. Pat. No. 6,140,630, U.S. Pat. No.6,376,868, U.S. Pat. No. 6,310,366, U.S. Pat. No. 6,326,652, U.S. Pat.No. 6,204,524 and U.S. Pat. No. 6,333,205, assigned to MicronTechnology, Inc., which are hereby incorporated by reference in theirentirety.

FIG. 1 illustrates a block diagram for a CMOS imager 10. The imager 10includes a pixel array 20. The pixel array 20 comprises a plurality ofpixels arranged in a predetermined number of columns and rows. Thepixels of each row in array 20 are all turned on at the same time by arow select line and the pixels of each column are selectively output bya column select line. A plurality of row and column lines are providedfor the entire array 20.

The row lines are selectively activated by the row driver 32 in responseto row address decoder 30 and the column select lines are selectivelyactivated by the column driver 36 in response to column address decoder34. Thus, a row and column address is provided for each pixel. The CMOSimager 10 is operated by the control circuit 40, which controls addressdecoders 30, 34 for selecting the appropriate row and column lines forpixel readout, and row and column driver circuitry 32, 36, which applydriving voltage to the drive transistors of the selected row and columnlines.

Each column contains sampling capacitors and switches in a sample andhold (S/H) circuit 38 comprising sampling and holding capacitors andswitches associated with the column driver 36 reads a pixel reset signalV_(rst) and a pixel image signal V_(sig) for each selected pixel. Adifferential signal (V_(rst)−V_(sig)) is produced by differentialamplifier 42 for each pixel. The signal is digitized byanalog-to-digital converter 45 (ADC). The analog-to-digital converter 45supplies the digitized pixel signals to an image processor 50, whichforms a digital image output 52.

Typical CMOS imager pixel cells have either a three transistor (3T) orfour transistor (4T) design, though pixel cells having a larger numberof transistors are also known. A 4T or higher T pixel may include atleast one electronic device such as a transistor for transferring chargefrom the photosensor to the storage region and one device, alsotypically a transistor, for resetting the storage region to apredetermined charge level prior to charge transference.

A 3T pixel does not typically include a transistor for transferringcharge from the photosensor to the storage region. A 3T pixel typicallycontains a photo-conversion device for supplying photo-generated chargeto the storage region; a reset transistor for resetting the storageregion; a source follower transistor having a gate connected to thestorage region, for producing an output signal; and a row selecttransistor for selectively connecting the source follower transistor toa column line of a pixel array. In a 3T pixel cell, the chargeaccumulated by a photo-conversion device may be read out prior toresetting the device to a predetermined voltage. These 3T pixel cellsmay be used to support automatic light control (ALC) operations. ALC isused to control the amount of light integrated by a pixel cell. ALCoperations may determine a time for readout based on the amount ofcharge generated by the photo-conversion device and may adjust the imageintegration time and thus the amount of charge further generated by thephoto-conversion device in response to the charge present on thephoto-conversion device at a particular time.

Although the 3T design (or 4T pixel operated in a 3T mode) may be usedto support ALC operations, the 4T pixel configuration is preferred overthe 3T pixel configuration for readout operations because it reduces thenumber of “hot” pixels in an array (those that experience increased darkcurrent), and it diminishes the kTC noise that 3T pixels experience withthe readout signals.

Since light conditions may change spatially and over time, automaticlight control is advantageous to ensure that the best image is obtainedby controlling the image sensor's exposure to the light. In some imagerapplications, there is a need to use the present illumination during theactual exposure of an image in a current frame to control the exposurebecause the use of the imager's illumination in a prior frame may not besufficient for the intended application. Further discussion on ALC andreal-time exposure control may be found in U.S. patent application Ser.No. 10/846,513, filed on May 17, 2004, and Ser. No. 11/052,217, filed onFeb. 8, 2005, assigned to Micron Technology, Inc., both of which areincorporated by reference herein.

Correlated double sampling (CDS) is a technique used to reduce noise andobtain a more accurate pixel signal. For CDS, the storage region, alsotermed herein as the floating diffusion region, begins at apredetermined reset voltage level by pulsing a reset transistor;thereafter, the reset voltage produced by the source follower transistoris read out through the row select transistor as a pixel reset signalV_(rst). Then, integrated photo-generated charge from the photosensor istransferred to the floating diffusion region by operation of a transfertransistor and a pixel image signal V_(sig) produced by the sourcefollower transistor is read out through the row select transistor. Thetwo values, V_(rst) and V_(sig), are subtracted thereby reducing commonnoise. The reset signal V_(rst) and image signal V_(sig) are obtainedduring the same image frame in a CDS operation.

In a conventional 4T pixel cell, because the transfer transistortransfers the photo-generated charge from the photosensor to thefloating diffusion region and readout circuitry, it is not possible toread out photo-generated charge without altering the charge on thephotosensor. Thus, when a 4T readout path is employed to monitor chargelevel in an ALC operation, the transfer of charge carriers through thetransfer transistor tends to destroy or alter the image signal, therebyresulting in a degraded image. Therefore, ALC is not readily used with aconventional 4T pixel cell.

Accordingly, there is a desire and need for automatic light control in adevice with low dark current and kT/C noise during an exposure periodthat uses present illumination, yet does not alter the image signalduring the charge integration time of the photosensor in the process.

BRIEF SUMMARY OF THE INVENTION

In various exemplary embodiments, the invention provides accurateexposure control in a pixel array comprising imaging pixels having atransfer gate and four or more transistors and using CDS while usingpixels that do not use a transfer gate for automatic light control.These embodiments allow monitoring of multiple pixel cells of the arrayto obtain sample data indicating the amount of light reaching the array,while allowing the image pixels to provide proper image data.

In one exemplary embodiment, a small percentage of the pixels in afour-transistor (4T) pixel (or pixel having more than four transistors)array is replaced with pixels that do not use a transfer gate, such as3T pixels. The pixel array is provided with two reset lines for eachrow; one reset line controls the reset for the 4T or higher T pixelswhile the other reset line controls the reset for the 3T pixels.

In another exemplary embodiment, a small percentage of the pixels in a4T or higher T pixel array are operated in a 3T mode, with the transfertransistor always turned on. The pixel array is provided with two resetlines for each row; one reset line controls the reset for theconventional operation of 4T or higher T pixels, while the other resetline controls the reset for the 4T pixels that are operated in 3T mode.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing and other advantages and features of the invention willbecome more apparent from the detailed description of the exemplaryembodiments provided below with reference to the accompanying drawings,in which:

FIG. 1 is a block diagram of a CMOS imager;

FIG. 2 is a block diagram of a CMOS imager constructed in accordancewith an embodiment of the invention;

FIG. 3 is a schematic diagram for a section of a row in a pixel arrayconstructed in accordance with an embodiment of the invention;

FIG. 4 is a schematic diagram for a section of a row in a pixel arrayconstructed in accordance with another embodiment of the invention;

FIG. 5 is an exemplary timing diagram for a CMOS imager constructed inaccordance with an embodiment of the invention;

FIG. 6 is a plan view of a section of a pixel array constructed inaccordance with an embodiment of the invention; and

FIG. 7 is a block diagram for a processor-base system constructed inaccordance with an embodiment of the invention.

DETAILED DESCRIPTION OF THE INVENTION

In the following detailed description, reference is made to theaccompanying drawings, which form a part hereof and show by way ofillustration specific exemplary embodiments in which the invention maybe practiced. These embodiments are described in sufficient detail toenable those skilled in the art to practice the invention, and it is tobe understood that other embodiments may be utilized, and thatstructural, logical, and electrical changes may be made withoutdeparting from the spirit and scope of the present invention. Thedescribed progression of processing and operating steps exemplifiesembodiments of the invention; however, the sequence of steps is notlimited to that set forth herein and may be changed as is known in theart, with the exception of steps necessarily occurring in a certainorder.

The terms “pixel” and “pixel cell,” as used herein, refer to aphoto-element unit cell containing a photo-conversion device andassociated circuitry for converting photons to an electrical signal. Thepixels discussed herein are illustrated and described with reference tousing three transistor (3T) and four transistor (4T) pixel circuits forthe sake of example only. It should be understood that the invention maybe used with respect to other imaging pixel arrangements having more(e.g., 5T, 6T) than four transistors or with pixel arrangements usingdevices other than transistors to provide output signals. Accordingly,in the following discussion it should be noted that whenever 4T pixelsare discussed, pixels having additional transistors, used for example,for an anti-blooming, conversion gain, or shutter gate may be used.Likewise, although 3T pixels are discussed for providing automatic lightcontrol, it should be noted that any pixel that enables the integratingcharge on a photosensor to be read during a charge integration periodmay be used. The following detailed description is, therefore, not to betaken in a limiting sense.

Referring to the figures, where like reference numbers designate likeelements, FIG. 2 shows an exemplary imager 110 having an automatic lightcontrol function constructed in accordance with the invention. Theimager 110 includes a pixel array 120 containing 4T pixels and a smallpercentage of 3T pixels (or 4T pixels operated in 3T mode with thetransfer transistors always turned on, as discussed below in moredetail) for automatic light control. Each row of the pixel array 120 hastwo reset lines 131, 133 controlling the reset operations for the pixelsof the row; reset line 131, for example, may control the reset of the 3Tpixels in the row, while reset line 133, for example, may control thereset of the 4T pixels in the row. The row lines are selectivelyactivated by the row driver 132 in response to row address decoder. Acolumn is also addressed and selected for pixel readout. Thus, a row andcolumn address is provided for each pixel.

The CMOS imager 110 is operated by the control circuit 140, whichcontrols address decoders 130, 134 for selecting the appropriate row andcolumn lines for pixel readout, and row and column driver circuitry 132,136, which apply driving voltage to the drive transistors for theselected row and column lines.

Each column contains sampling capacitors and switches in a sample andhold (S/H) circuit 138 associated with the column driver 136 that readsa pixel reset signal Vrst and a pixel image signal Vsig for selectedpixels. A differential signal (Vrst−Vsig) is produced by differentialamplifier 140 for each pixel. The signal is digitized byanalog-to-digital converter 145 (ADC). The analog-to-digital converter145 supplies the digitized pixel signals to an image processor 150,which forms a digital image output 152.

As mentioned above, pixel array 120 contains 4T pixels and a smallpercentage of 3T pixels. For example, approximately 1% of the pixels inarray 120 are 3T pixels. 4T pixels provide low dark current and truecorrelated double sampling and are imaging pixels. 3T pixels are ideallysuited for automatic light control, which is the ability to monitor thesignal level so that exposure time can be well-controlled for each framewithout altering the image signal.

The 3T and 4T pixels typically are not reset at the same time. Toaccommodate the two types of pixels having different reset times, tworeset lines 131, 133 for each row are routed into the pixel array 120.The two reset lines 131, 133 are routed to each array row, although eachpixel in a row is only connected to one of the two reset lines 131, 133,depending on whether the pixel is a 3T pixel or a 4T pixel. The 3Tpixels are connected to reset line 131 and the 4T pixels are connectedto reset line 133.

While the reset level must be sampled at different times, the imagesignal level can be sampled at the same time for both 3T and 4T pixels.Therefore, extra logic is introduced in the column circuitry to enabledifferent reset level sampling times.

The connections of 3T and 4T pixels of pixel array 120 to reset andcolumn lines are shown in FIGS. 3 and 4. An exemplary embodiment of theinvention depicted in FIG. 3 combines the 4T pixel 70 with a 3T pixel 60in the same row described below. The 3T pixel comprises a resettransistor 61, source follower transistor 62, and a row selecttransistor 63 and can be formed by any suitable method. The 4T pixel 70comprises transfer transistor 76, reset transistor 71, source followertransistor 72, and a row select transistor 73. In other embodiments ofthe invention, these pixels may employ more transistors than theillustrated 3T and 4T design (5T, 6T, etc.). Similarly, otherembodiments could provide pixel arrangements using devices other thattransistors to provide output signals; another alternative includes acapacitor (not shown) electrically coupled to the floating diffusionregions 64, 74 for assisting the floating diffusion regions 64, 74 instoring the transferred charges, adjusting the conversion gain of thepixel, and/or to make the pixel response more linear.

A photosensor 65 converts incident light into charge. A floatingdiffusion region 64 receives charge from the photosensor 65 and isconnected to the reset transistor 61 and the gate of the source followertransistor 62. The source follower transistor 62 outputs at differenttimes a reset signal V_(rst) and an image signal V_(sig) (collectivelyshown in FIG. 3 as Vout). Vout (either V_(rst) or V_(sig)) representsthe charge present at the floating diffusion region 64 which is providedto a sample and hold circuit 138 (FIG. 2) when the row select transistor63 is turned on. The reset transistor 61 resets the floating diffusionregion 64 to a known potential after transfer of charge from thephotosensor 65 (when RST-1 is applied). The photosensor 65 may be aphotodiode, a photogate, a photoconductor, or other type of photosensor.For ALC operation, it is not necessary to output a reset sample V_(rst)from the 3T pixel. The reset level may also come from an extra pixel row(not shown) where an estimated reset level has been extracted.Alternatively, the row select transistor 63 may be operated to onlyoutput V_(sig) as the output signal Vout.

Imaging pixel 70 is a four transistor (4T) pixel. The four transistorsinclude a transfer transistor 76, reset transistor 71, source followertransistor 72, and a row select transistor 73. A photosensor 75 convertsincident light into charge. A floating diffusion region 74 receivescharge from the photosensor 75 through the transfer transistor 76 (whenactivated by control signal TG) and is connected to the reset transistor71 and the gate of the source follower transistor 72. The sourcefollower transistor 72 outputs a reset signal V_(rst) and an imagesignal V_(sig) (collectively shown as Vout). Vout represents the chargepresent in the floating diffusion region 74 which is provided to asample and hold circuit 138 (FIG. 2) when the row select transistor 73is turned on. The reset transistor 71 resets the floating diffusionregion 74 to a known potential prior to transfer of charge from thephotosensor 75 (when RST-2 is applied). Similar to photosensor 65, thephotosensor 75 may be a photodiode, a photogate, a photoconductor, orother type of photosensor.

The two pixels 60, 70 are provided in the same row having reset lines131, 133. Reset transistor 61 of pixel 60 is connected to reset line131, which controls the reset transistor for all 3T pixels in the row.Reset transistor 71 of pixel 70 is connected to reset line 133, whichcontrols the reset transistor for all 4T pixels in the row.

FIG. 4 is a schematic diagram of two pixels 80, 70 in a single row ofanother embodiment of pixel array 120. Pixels 80, 70 are both 4T pixels.Pixel 70 is as described above with respect to FIG. 3. Pixel 80 is afour transistor (4T) pixel that is operated in 3T mode. The fourtransistors of pixel 80 include a transfer transistor 86, resettransistor 81, source follower transistor 82, and a row selecttransistor 83. Transfer transistor 86 is always turned on to operate thepixel 80 in 3T mode. A photosensor 85 converts incident light intocharge. A floating diffusion region 84 receives charge from thephotosensor 85 through the activated transfer transistor 86 and isconnected to the reset transistor 81 and the gate of the source followertransistor 82. The source follower transistor 82 outputs a reset signalV_(rst) and an image signal V_(sig) (collectively shown in FIG. 3 asVout). Vout (either V_(rst) or V_(sig)) represents the charge present atthe floating diffusion region 84 to a sample and hold circuit 138 (FIG.2) when the row select transistor 83 is turned on. The reset transistor81 resets the floating diffusion region 84 to a known potential prior totransfer of charge from the photosensor 85. Similar to pixel 70, thephotosensor 85 may be a photodiode, a photogate, a photoconductor, orother type of photosensor. Also, like the FIG. 3 3T pixel, pixel 80 maybe operated so that only the image signal V_(sig) is output and sampledfor ALC operation.

As described above with respect to FIG. 3, the two pixels 80, 70 areprovided in the same row having reset lines 131, 133. Reset transistor81 of pixel 80 is connected to reset line 131, which controls the resettransistor for all 4T pixels in the row that are operated in 3T mode.Reset transistor 71 of pixel 70 is connected to reset line 133, whichcontrols the reset transistor for all 4T pixels in the row that areoperated in 4T mode. Therefore, pixel 80 and pixel 70 may be reset atdifferent times.

The reset timing of the pixels 60, 70 of FIG. 3 is illustrated in FIG.5. FIG. 5 is an exemplary timing diagram for a row having 3T pixels and4T pixels, as controlled by the timing and control circuit 140. Forsimplicity, pixel circuit operations are described with reference to asingle pair of pixel cells 60, 70; however, each row of array 120 havingpixels 60, 70 may operate as described below in connection with FIG. 5.Also, the exemplary timing diagram may be used for a row having 4Tpixels, some of which are operated in 3T mode by keeping the transfertransistor constantly on, such as the pair of pixels in a rowillustrated in FIG. 4, wherein the timing of 3T pixel 60 (FIG. 3) mayrepresent the timing of 4T pixel 80 (FIG. 4) that is being operated in3T mode. Furthermore, signals RS1, rst_4T, tx_4T, shr_4T, shs_4T,rst_3T, shs_3T, and shr_3T are provided to illustrate the timing of oneexemplary operation and do not in any way limit the invention to theillustrated operation.

FIG. 5 shows one exemplary frame readout operation which may be usedwith the pixel arrays depicted in FIG. 3 or 4 that begins at time t0.The readout operation begins by resetting the floating diffusions 64, 74of pixels 60, 70, respectively. For each active row of the array 120,the timing and control circuitry 140 pulses a row select signal (RS1)high to turn on the row select transistors 63, 73 of pixels 60, 70,respectively. Timing and control circuitry 140 pulses a reset signal(rst_4T) on reset line 133 high to activate each 4T pixel's (pixel 70)reset transistor 71. At this time, sampling capacitors of S/H circuit138 store the reset voltage Vrst(4T) of the 4T pixel 70 (when shr_4T isactivated). The reset voltage Vrst(4T) is read out in sequence for eachrow of the array 120 that includes 4T pixels.

After an image integration period ends, timing and control circuitry 140also pulses a transfer signal (tx_4T) to activate the transfertransistor 76 of pixel 70. Any charge on the photosensor 75 of pixel 70is thus transferred through transfer transistor 76 to the floatingdiffusion region 74. This marks the end of the 4T integration period, orcharge generating period, for the photosensor 75. At this time, samplingcapacitors of S/H circuit 138 store the signal voltages Vsig(4T) andVsig(3T) of the 4T pixel 70 (when shs_4T is activated) and 3T pixel 60(when shs_3T is activated), respectively. These are photo image signalsrelated to the amount of light incident on the pixels. The samplevoltages Vsig(4T) and Vsig(3T) are read out in sequence for each row ofthe array 120 that includes 3T and 4T pixels. It should be noted thatthe sampling (or comparing) of Vsig for the 3T pixel may occur at anytime during charge integration of the 4T pixels to provide a signal foruse in ALC operations. Accordingly the sample and hold signal shs_3T isillustrated with arrows in FIG. 5, denoting this flexibility.

As for the ALC operation itself, for each column, an extracted commonaverage reset level for all 3T pixels in the pixel array and the signallevel from each of the 3T pixels may be sampled and converted to get avalue for use in ALC control. Alternatively, the signal from the 3Tpixel in a column may be compared with a predetermined voltage level, asdescribed in further detail in U.S. patent application Ser. No.10/846,513 to Olsen et al., rather than sampling and converting thesignal, to decrease power consumption and/or increase ALC pixel readoutspeed.

Timing and control circuitry 140 then pulses the transfer transistor 76of pixel 70 and reset transistors 61, 71 of pixels 60, 70, to reset thephotosensors 65, 75 and floating diffusion regions 64, 74, respectively.Sampling capacitors 138 take the reset voltage Vrst(3T) of the 3T pixel60 (shr_3T). The reset voltage Vrst(3 t) is read out in sequence foreach row of the array 120 that includes 3T pixels. After completion ofreadouts, all signals are returned to low; and the sequence of steps isrepeated row-by-row for each row of the pixel array 120. For simplicity,FIG. 5 shows only a single integration period of one representative rowof pixels having 3T and 4T pixels.

In the above-described embodiment, the photo signal level is sampled atthe same time for both 3T (or 4T operated in 3T mode) and 4T pixels,while the reset level is sampled at different times. Therefore, extralogic must be introduced in the column circuitry to be able to selectbetween at least, but not limited to, different reset level samplingtime, depending on which row is selected. However, the timing of theframe readout operation is not limited to the above-describedembodiment. For example, it is possible to read out the 3T signal levelat the same time as the 4T reset level, and vice versa. The start andstop time of the exposure would then be slightly different for the 3Tand 4T pixels. Moreover, since the 3T and 4T pixels have integrationperiods, it is not crucial that the integration start and stop time beidentical for the 3T and 4T pixels. Regardless of whether their exposuretime begins and ends together, a gain factor should be applied to the 3Tpixels in order to calculate a readout voltage consistent with thesurrounding 4T pixels, as will be described in further detail below.

The 3T pixels 60 may be provided along a row of 4T pixels 70 in aconfiguration as illustrated in FIG. 6. FIG. 6 is a plan view of asection of a pixel array 120 of FIG. 2. The pixel array 120 featurespixels arranged in a Bayer pattern 300 consisting of alternating rows,one having alternating red and green pixels, and the next havingalternating green and blue pixels. All of the pixels shown in FIG. 6 are4T pixels 70 having either red, green, or blue associated color filters,with the exception of a single red 3T pixel 60. As mentioned above,approximately 1% of the red pixels may be replaced with 3T pixels. The3T pixels are constantly monitored and may be read out after theintegration period of the 4T pixel ends.

Since the sensitivity, or responsivity, of 3T pixels 60 is not the sameas the sensitivity of 4T pixels 70, a gain factor may be applied to the3T pixel 60 to estimate what the readout of a 4T pixel would be at thatlocation. An exemplary method of estimating the gain factor includes anassumption that the average readout of the surrounding 4T pixels 70 willbe the same as the average readout voltage of the 3T pixel. Therefore,an average readout voltage is calculated by taking the average voltageof the surrounding red 4T pixels. For example, the average of four red4T pixels surrounding the red 3T pixel 60 would be calculated asfollows:

Vavg(4T)=(V(A ₁)+V(A ₂)+V(A ₃)+V(A ₄))/4.

In another example, the average of eight red 4T pixels surrounding thered 3T pixel 60 would be calculated as follows:

Vavg(4T)=((V(A ₁)+V(A ₂)+V(A ₃)+V(A ₄)+V(B ₁)+V(B ₂)+V(B ₃)+V(B ₄))/8.

The gain factor is then calculated as follows:

Gain factor=Vavg(4T)/Vavg(3T).

Therefore, the readout voltage of the 3T pixels 60 would have the gainfactor applied to it by multiplying it by the ratio of average readoutvoltage of the surrounding 4T pixels, divided by the ratio of averagereadout voltage of the surrounding 3T pixels. Although the above gainfactor was described as being applied to a 3T pixel, it should also benoted that a gain factor would also be applied to a 4T pixel operated in3T mode. It should also be noted that although the initial averagereadout voltage estimate will be inaccurate when the image sensors startcapturing frames, after several frames, the average estimate willimprove since the average calculation may be updated and performed forevery frame. The gain factor may be applied by the image processor 150(FIG. 2) which receives the integrated pixel signals, or the imageprocessor, or other processor, can control the gain of amplifier 142, orother amplifier in the analog pixel signal processing chain.

The 3T signal, as originally read out, is used for automatic lightcontrol. Automatic light control may be performed in accordance with themethods described in U.S. patent application Ser. No. 10/846,513, filedon May 17, 2004, and Ser. No. 11/052,217, filed on Feb. 8, 2005,assigned to Micron Technology, Inc, which are herein incorporated byreference.

FIG. 7 illustrates a processor-based system 400 including the imagesensor 110 of FIG. 2 and employing the exemplary pixel array discussedwith reference to FIGS. 2-6. The processor-based system 400 is exemplaryof a system having digital circuits that could include image sensordevices. Without being limiting, such a system could include a computersystem, camera system, scanner, machine vision, vehicle navigation,video phone, surveillance system, auto focus system, star trackersystem, motion detection system, image stabilization system, and otherimage sensing systems.

The processor-based system 400, for example a camera system, generallycomprises a central processing unit (CPU) 401, such as a microprocessor,that communicates with an input/output (I/O) device 402 over a bus 403.Image sensor 400 also communicates with the CPU 405 over bus 403. Theprocessor-based system 900 also includes random access memory (RAM) 404,and can include removable memory 405, such as flash memory, which alsocommunicate with CPU 401 over the bus 403. Image sensor 400 may becombined with a processor, such as a CPU, digital signal processor, ormicroprocessor, with or without memory storage on a single integratedcircuit or on a different chip than the processor.

The processes and devices described above illustrate preferred methodsand typical devices of many that could be used and produced. The abovedescription and drawings illustrate embodiments, which achieve theobjects, features, and advantages of the present invention. However, itis not intended that the present invention be strictly limited to theabove-described and illustrated embodiments. Any modification, thoughpresently unforeseeable, of the present invention that comes within thespirit and scope of the following claims should be considered part ofthe present invention.

1-12. (canceled)
 13. A pixel array comprising: a plurality of imagecapture pixels in a pixel row for providing image capture signals, eachof said plurality of image capture pixels configured to transfer chargeto a corresponding charge storage region after an integration period; atleast one automatic light control pixel in said pixel row for providingan automatic light control signal, said at least one automatic lightcontrol pixel configured to transfer charge to a corresponding chargestorage region during said integration period; a first reset line forresetting said charge storage regions of said plurality of image capturepixels; and a second reset line for resetting said charge storage regionof said at least one automatic light control pixel.
 14. The pixel arrayof claim 13, wherein each of said plurality of image capture pixelscomprises at least a photosensor, said charge storage region, and areset transistor connected to said first reset line.
 15. The pixel arrayof claim 13, wherein said at least one automatic light control pixelcomprises at least a photosensor for providing charge to said chargestorage region during said integration period, and a reset transistorconnected to said second reset line for resetting said charge storageregion.
 16. The pixel array of claim 15, wherein said at least oneautomatic light control pixel is configured to continuously transfercharge to said corresponding charge storage region during saidintegration period.
 17. The pixel array of claim 13 further comprising acontrol circuit for providing a first reset signal on said first resetline at a different time than providing a second reset signal on saidsecond reset line.
 18. The pixel array of claim 17, wherein saidplurality of image capture pixels have different integration times thansaid at least one automatic light control pixel.
 19. The pixel array ofclaim 13, wherein said at least one automatic light control pixel has acalculated output voltage with an applied gain factor, based on a ratioof an average output voltage of a group of said plurality of imagecapture pixels surrounding said automatic light control pixel to anaverage output voltage of said automatic light control pixel.
 20. Apixel array comprising: a plurality of image capture pixels, whereineach image capture pixel has a transfer transistor between a photosensorand a floating diffusion region for transferring charge at the end of anintegration period; a plurality of automatic light control pixels,wherein each automatic light control pixel is configured to transfercharge from a photosensor to a floating diffusion region of saidautomatic light control pixel during said integration period; a firstreset line for resetting said plurality of image capture pixels; and asecond reset line for resetting said plurality of automatic lightcontrol pixels.
 21. The pixel array of claim 20, further comprising acontrol circuit for providing a first reset signal on said first resetline at a different time than providing a second reset signal on saidsecond reset line.
 22. The pixel array of claim 21, wherein saidplurality of automatic light control pixels has a different integrationtime than said plurality of image capture pixels.
 23. The pixel array ofclaim 21, wherein said one of said plurality of automatic light controlpixels has a calculated output voltage with an applied gain factor,based on a ratio of an average output voltage of a group of saidplurality of image capture pixels surrounding said automatic lightcontrol pixel to an average output voltage of said automatic lightcontrol pixel. 24-31. (canceled)
 32. A method of controlling an imagercomprising an array of pixels, said method comprising the acts of:operating a first set of pixels in the array to obtain a set of imagecapture pixel signals during an integration period; capturing an imagesignal with said set of image capture pixel signals; operating a secondset of pixels in the array to obtain a set of light control pixelsignals, wherein said step of operating said second set of pixelsincludes connecting a photosensor of each of said second set of pixelsto a respective charge collection region of said second set of pixelsduring said integration period; and performing automatic light controlwith said set of light control pixel signals.
 33. The method of claim32, wherein said act of obtaining said set of image capture pixelsignals is performed at a different time than said act of obtaining saidset of light control pixel signals. 34-46. (canceled)
 47. The pixelarray of claim 13, wherein said at least one automatic light controlpixel comprises a photosensor directly coupled to said charge storageregion.
 48. The pixel array of claim 13, wherein said at least oneautomatic light control pixel comprises a photosensor and a transfertransistor connected between said photosensor and said charge storageregion, said transfer transistor configured to transfer charge to saidcharge storage region during at least a portion of said integrationperiod.
 49. The pixel array of claim 20, wherein said photosensor ofeach automatic light control pixel is directly coupled to said chargestorage region.
 50. The pixel array of claim 20, wherein each automaticlight control pixel comprises a transfer transistor connected betweensaid photosensor and said floating diffusion region, said transfertransistor configured to transfer charge to said charge storage regionduring at least a portion of said integration period.
 51. The pixelarray of claim 50, wherein said transfer transistor is configured tocontinuously transfer charge to said charge storage region during saidintegration period.
 52. The method of claim 32, wherein said step ofconnecting said photosensor to said respective charge collection regionof said second set of pixels during said integration period furthercomprises activating a transfer transistor during at least a portion ofsaid integration period, wherein said transfer transistor is configuredto prevent transfer of charge from said photosensor to said chargecollection region when not activated.
 53. The method of claim 32,wherein each said photosensor of said second set of pixels is directlyconnected to said respective charge collection region.